MOSFETs in the Sub-threshold Region (i.e. a bit below VT)
نویسنده
چکیده
In the depletion approximation for n-channel MOS structures we have neglected the electrons beneath the gate electrode when the gate voltage is less than the threshold voltage, VT. We said that it is only when the gate voltage is above threshold that they are significant, and that they are then the dominant negative charge under the gate. Furthermore, we say that above threshold all of the gate voltage in excess of VT induces electrons in the channel; thus our model is that the sheet charge density under the gate, qN, is
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